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Czochralski technique : ウィキペディア英語版
Czochralski process

The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The process is named after Polish scientist Jan Czochralski,〔(Polish), (English), Paweł Tomaszewski, ""Jan Czochralski i jego metoda" (ang.Jan Czochralski and his method), Oficyna Wydawnicza ATUT, Wrocław–Kcynia 2003, ISBN 83-89247-27-5〕 who invented the method in 1916 while investigating the crystallization rates of metals.〔J. Czochralski (1918) "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle" (new method for the measurement of the crystallization rate of metals ), ''Zeitschrift für Physikalische Chemie'', 92 : 219–221.〕
The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman-Stockbarger technique.
== Application ==

Monocrystalline silicon (mono-Si) grown by the ''Czochralski process'' is often referred to as ''monocrystalline Czochralski silicon'' (Cz-Si). It is the basic material in the production of integrated circuits used in computers, TVs, mobile phones and all types of electronic equipment and semiconductor devices.〔(Czochralski Crystal Growth Method ). Bbc.co.uk. 30 January 2003. Retrieved on 2011-12-06.〕 Monocrystalline silicon is also used in large quantities by the photovoltaic industry for the production of conventional mono-Si solar cells. The almost perfect crystal structure yields the highest light-to-electricity conversion efficiency for silicon.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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